Integration of GaN with Si using a AuGe-mediated wafer bonding technique

Heterogeneous Photonic Integration by Direct Wafer Bonding

The silicon (Si) photonics platform has emerged as a promising integration platform for use in many applications, particularly datacenter communications, which is expected to produce demand for large numbers of low cost photonic integrated circuits (PICs). Sibased PICs are almost universally based on Si-on-insulator (SOI) wafers, which are enabled by wafer bonding technology. Si is useful as a ...

Integration of inverted InGaAs MSM array on Si substrate through low temperature wafer bonding

An array of inverted InGaAs metal–semiconductor–metal (MSM) photodetectors has been integrated into a silicon substrate using a low temperature In–Au wafer bonding technique. The total thickness of the bonding metal layers is less than 1 mm. It is shown that the photocurrent of the back illuminated InGaAs MSM photodetectors after bonding increases by 70% compared to the front illuminated MSM me...

Copper wafer bonding in three-dimensional integration

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

Au/Si eutectic bonding is considered to BE a promising technology for creating 3D structures and hermetic packaging in micro-electro-mechanical system (MEMS) devices. However, it suffers from the problems of a non-uniform bonding interface and complex processes for the interconnection of metal wires. This paper presents a novel Au/Si eutectic wafer bonding structure and an implementation method...

The Role of Wafer Bonding in 3D Integration and Packaging

There are numerous process integration schemes currently in place for the implementation of 3D-IC. Via first, via middle, via last along with back end of line (BEOL), front end of line (FEOL) and other variations of these approaches. This work will explore the role of wafer bonding, both permanent and temporary, in the fabrication of 3D-IC. Additionally, the materials and process flows used for...